rev.1.00, aug.20.20 04, page 1 of 6 fs50asj-03f high-speed switching use nch power mos fet rej03g0238-0100 rev.1.00 aug.20.2004 features ? drive voltage : 4v ? v dss : 30 v ? r ds(on) (max) : 12.2 m ? ? i d : 50 a ? recovery time of the integrated fast recovery diode (typ.) : 50 ns outline mp-3a 1 1 3 3 2, 4 2 4 1. gate 2. drain 3. source 4. drain applications motor control, lamp control, soleno id control, dc-dc converters, etc. maximum ratings (tc = 25 c) parameter symbol ratings unit conditions drain-source voltage v dss 30 v v gs = 0 v gate-source voltage v gss 20 v v ds = 0 v drain current i d 50 a drain current (pulse) i dm 200 a avalanche current (pulse) i da 50 a l = 6 h source current i s 50 a source current (pulse) i sm 200 a maximum power dissipation p d 50 w channel temperature tch ? 55 to + 150 c storage temperature tstg ? 55 to + 150 c mass ? 0.32 g typical value
fs50asj-03f rev.1.00, aug.20.20 04, page 2 of 6 electrical characteristics (tch = 25c) parameter symbol min. typ. max. unit test conditions drain-source breakdown voltage v (br)dss 30 ? ? v i d = 1 ma, v gs = 0 v gate-source breakdown voltage v (br)gss 20 ? ? v i g = 100 a, v ds = 0 v drain-source leakage current i dss ? ? 100 av ds = 30 v, v gs = 0 v gate-source leakage current i gss ?? 10 av gs = 20 v, v ds = 0 v gate-source threshold voltage v gs(th) 1.0 1.5 2.0 v i d = 1 ma, v ds = 10 v drain-source on-state resistance r ds(on) ? 9.2 12.2 m ? i d = 25 a, v gs = 10 v drain-source on-state resistance r ds(on) ?1319m ? i d = 25 a, v gs = 4 v drain-source on-state voltage v ds(on) ? 0.23 0.31 v i d = 25 a, v gs = 10 v forward transfer admittance | y fs |?45?si d = 25 a, v ds = 10 v input capacitance ciss ? 2100 ? pf output capacitance coss ? 690 ? pf reverse transfer capacitance crss ? 340 ? pf v ds = 10 v, v gs = 0 v, f = 1mhz turn-on delay time t d(on) ?16?ns rise time t r ?90?ns turn-off delay time t d(off) ? 130 ? ns fall time t f ?85?ns v dd = 15 v, i d = 25 a, v gs = 10 v, r gen = r gs = 50 ? source-drain voltage v sd ?1.01.5 vi s = 25 a, v gs = 0 v thermal resistance rth(ch-c) ? ? 2.5 c/w channel to case diode reverse recovery time t rr ?50?nsi s = 25 a, dis/dt = ? 50 a/ s
fs50asj-03f rev.1.00, aug.20.20 04, page 3 of 6 performance curves 0 20 40 60 80 100 0200 50 100 150 drain power dissipation derating curve case temperature tc (c) drain power dissipation p d (w) maximum safe operating area drain-source voltage v ds (v) drain current i d (a) 10 0 10 1 2 3 5 7 10 2 2 3 5 7 10 0 10 1 3 257 357 3 25 7 2 3 tc = 25c single pulse tw = 10s 100s 10ms 1ms dc output characteristics (typical) drain current i d (a) drain-source voltage v ds (v) output characteristics (typical) drain current i d (a) drain-source voltage v ds (v) 0 10 20 30 40 50 0 0.4 0.8 1.2 1.6 2.0 3v 6v 5v 4v v gs = 10v p d = 50w tc = 25c pulse test 0 10 20 30 40 50 10 0 210 1 357 2 10 2 357 2 10 3 35 7 v gs = 4v 10v tc = 25c pulse test on-state voltage vs. gate-source voltage (typical) gate-source voltage v gs (v) drain-source on-state voltage v ds(on) (v) on-state resistance vs. drain current (typical) drain current i d (a) drain-source on-state resistance r ds(on) (m ? ) 0 1.0 2.0 3.0 4.0 5.0 02468 10 i d = 80a tc = 25c pulse test 50a 30a 0 20 40 60 80 100 0 1.0 2.0 3.0 4.0 5.0 p d = 50w tc = 25c pulse test 4v 6v 3v v gs = 10v 5v
fs50asj-03f rev.1.00, aug.20.20 04, page 4 of 6 0 20 40 60 80 100 02468 10 tc = 25c v ds = 10v pulse test transfer characteristics (typical) gate-source voltage v gs (v) drain current i d (a) forward transfer admittance vs. drain current (typical) drain current i d (a) forward transfer admittance | y fs | (s) 10 0 10 1 2 24 4 710 2 335 5 7 10 0 10 1 2 3 4 5 7 10 2 2 3 4 5 7 tc = 25c 75c 125c v ds = 10v pulse test 10 2 10 3 2 3 5 7 10 4 2 3 5 7 10 0 10 1 5 55 7 37 10 2 10 ?1 3 2 3 2 2 7 10 1 10 2 2 3 4 5 7 10 3 2 3 4 5 7 td(off) td(on) tr tch = 25c v dd = 15v v gs = 10v r gen = r gs = 50 ? tf switching characteristics (typical) drain-source voltage v ds (v) capacitance vs. drain-source voltage (typical) drain current i d (a) capacitance (pf) switching time (ns) 10 0 10 1 2 24 4 710 2 335 57 ciss coss crss tch = 25c f = 1mhz v gs = 0v gate-source voltage vs. gate charge (typical) gate charge qg (nc) gate-source voltage v gs (v) source-drain diode forward characteristics (typical) source-drain voltage v sd (v) source current i s (a) 0 2 4 6 8 10 0 102030405 0 tch = 25c i d = 50a 0 20 40 60 80 100 0 0.4 0.8 1.2 1.6 2.0 v gs = 0v pulse test tc = 125c 75c 25c v ds = 10v 25v 20v
fs50asj-03f rev.1.00, aug.20.20 04, page 5 of 6 channel temperature tch (c) threshold voltage vs. channel temperature (typical) gate-source threshold voltage v gs(th) (v) on-state resistance vs. channel temperature (typical) channel temperature tch (c) drain-source on-state resistance r ds(on) (tc) drain-source on-state resistance r ds(on) (25c) 10 ?1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 ?50 0 50 100 150 v gs = 10v i d = 2a pulse test 0 0.8 1.6 2.4 3.2 4.0 ?50 0 50 100 150 v ds = 10v i d = 1ma transient thermal impedance characteristics channel temperature tch (c) breakdown voltage vs. channel temperature (typical) pulse width tw (s) transient thermal impedance zth(ch?c) (c/w) drain-source breakdown voltage v (br)dss (tc) drain-source breakdown voltage v (br)dss (25c) 0.4 0.6 0.8 1.0 1.2 1.4 ?50 0 50 100 150 v gs = 0v i d = 1ma 10 ?2 10 ?1 2 3 5 7 10 0 2 3 5 7 10 1 2 3 5 7 10 ?4 23 57 23 57 23 57 23 57 10 0 23 57 10 1 23 57 10 2 10 ?3 10 ?2 10 ?1 p dm tw d = t tw t 0.5 0.2 d = 1.0 0.1 0.01 0.05 0.02 t r t d(on) vin 90% 90% 10% 10% vout t d(off) 90% 10% t f vin monitor d.u.t. r l v dd vout monitor r gen r gs switching time measurement circuit switching waveform single pulse
fs50asj-03f rev.1.00, aug.20.20 04, page 6 of 6 package dimensions mp-3a eiaj package code jedec code mass (g) (reference value) lead material ? 0.32 cu alloy ? symbol dimension in millimeters min typ max a a 1 a 2 b d e e x y 1 y zd ze 5.3 0.2 0.5 0.1 0.1 0.1 0.5 0.2 6.6 2.3 1.4 0.2 2.3 10.4 max 1 max 2.5 min 0.76 1 0.76 0.2 1 0.2 6.1 0.2 2.3 0.2 note 1) the dimensional figures indicate representative values unless otherwise the tolerance is specified. order code lead form standard packing quantity standard order code standard order code example surface-mounted type taping 3000 type name ? t +direction (1 or 2) +3 FS50ASJ-03F-T13 surface-mounted type plastic magazine (tube) 75 type name fs50asj-03f note : please confirm the specificat ion about the shipping in detail.
keep safety first in your circuit designs! 1. renesas technology corp. puts the maximum effort into making semiconductor products better and more reliable, but there is a lways the possibility that trouble may occur with them. trouble with semiconductors may lead to personal injury, fire or property damage. remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placeme nt of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. notes regarding these materials 1. these materials are intended as a reference to assist our customers in the selection of the renesas technology corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to renesas t echnology corp. or a third party. 2. renesas technology corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. all information contained in these materials, including product data, diagrams, charts, programs and algorithms represents i nformation on products at the time of publication of these materials, and are subject to change by renesas technology corp. without notice due to product improvement s or other reasons. it is therefore recommended that customers contact renesas technology corp. or an authorized renesas technology corp. product distrib utor for the latest product information before purchasing a product listed herein. the information described here may contain technical inaccuracies or typographical errors. renesas technology corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies o r errors. please also pay attention to information published by renesas technology corp. by various means, including the renesas techn ology corp. semiconductor home page (http://www.renesas.com). 4. when using any or all of the information contained in these materials, including product data, diagrams, charts, programs, a nd algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. renesas technology corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. renesas technology corp. semiconductors are not designed or manufactured for use in a device or system that is used under ci rcumstances in which human life is potentially at stake. please contact renesas technology corp. or an authorized renesas technology corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerosp ace, nuclear, or undersea repeater use. 6. the prior written approval of renesas technology corp. is necessary to reprint or reproduce in whole or in part these materi als. 7. if these products or technologies are subject to the japanese export control restrictions, they must be exported under a lic ense from the japanese government and cannot be imported into a country other than the approved destination. any diversion or reexport contrary to the export control laws and regulations of japan and/or the country of destination is prohibited. 8. please contact renesas technology corp. for further details on these materials or the products contained therein. sales strategic planning div. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan http://www.renesas.com renesas technology america, inc. 450 holger way, san jose, ca 95134-1368, u.s.a tel: <1> (408) 382-7500 fax: <1> (408) 382-7501 renesas technology europe limited. dukes meadow, millboard road, bourne end, buckinghamshire, sl8 5fh, united kingdom tel: <44> (1628) 585 100, fax: <44> (1628) 585 900 renesas technology europe gmbh dornacher str. 3, d-85622 feldkirchen, germany tel: <49> (89) 380 70 0, fax: <49> (89) 929 30 11 renesas technology hong kong ltd. 7/f., north tower, world finance centre, harbour city, canton road, hong kong tel: <852> 2265-6688, fax: <852> 2375-6836 renesas technology taiwan co., ltd. fl 10, #99, fu-hsing n. rd., taipei, taiwan tel: <886> (2) 2715-2888, fax: <886> (2) 2713-2999 renesas technology (shanghai) co., ltd. 26/f., ruijin building, no.205 maoming road (s), shanghai 200020, china tel: <86> (21) 6472-1001, fax: <86> (21) 6415-2952 renesas technology singapore pte. ltd. 1, harbour front avenue, #06-10, keppel bay tower, singapore 098632 tel: <65> 6213-0200, fax: <65> 6278-8001 renesas sales offices ? 200 4. re nesas technology corp ., all rights reser v ed. printed in ja pan. colophon .1.0
|
